DRAM

Samsung Electronics develops the industry’s first ‘36GB HBM3E 12H’… “Optimal revolutionary product for AI services”

Samsung Electronics succeeded in developing the industry's first 36 gigabyte (GB) HBM3 12-layer stacked DRAM. Through this, the corporate plans to take the lead within the high-capacity HBM market. Samsung Electronics (CEOs Jong-hee Han...

The explanation for the extension of the semiconductor business in China is the prediction of ‘prolonged technology war between the US and China’

The background of the prospect that the US government will allow Korean corporations corresponding to Samsung Electronics and SK Hynix to increase their business in China is an evaluation that leaving a way out...

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