A domestic research team developed a technique for synthesizing a two-dimensional semiconductor material thinner than 1 nm (nanometer) and confirmed the potential of using it as a next-generation semiconductor material that surpasses silicon.
The Gwangju Institute of Science and Technology (GIST, President Giseon Kim) announced on the thirteenth that the Chemistry Professor Hyunseop Lim’s research team improved the synthesis means of two-dimensional molybdenum disulfide (MoS2) and developed a large-area single crystal synthesis method that dramatically reduces the boundaries between crystal particles.
Molybdenum disulfide is attracting attention as a next-generation two-dimensional nanomaterial because it might probably overcome the restrictions of graphene, which is named a dream material. It was lacking.
The research team improved synthesis efficiency by replacing the present solid precursor utilized in the synthesis of two-dimensional molybdenum disulfide with an inorganic molecular precursor. A latest technology has been developed that may synthesize two-dimensional molybdenum disulfide as a single layer and single crystal on a sapphire substrate.
As well as, the role of the terminal functional group of the sapphire substrate, which had been shrouded in a veil, was identified in ‘epitaxial growth’, a key strategy of single crystal synthesis. A sapphire substrate composed of aluminum and oxygen could have a hydroxyl group or an aluminum group as a terminal functional group depending on the air temperature.
Amongst these, a latest mechanism that the aluminum terminal functional group plays a key role in the expansion of two-dimensional molybdenum disulfide single crystals was proposed through surface crystal structure evaluation and quantum calculations.
Professor Lim Hyun-seop said, “We expect that this research will advance the timing of using molybdenum disulfide, a two-dimensional semiconductor nanomaterial, as a next-generation semiconductor material.” It can also contribute to development,” he said.
Reporter Hojeong Na hojeong9983@aitimes.com
